Investigation of the physical properties of nanoscale porous silicon films

Authors

  • S.M. Manakov Al-Farabi Kazakh National University, NNLOT, al-Farabi 71, 050040 Almaty, Kazakhstan
  • Ye. Sagidolda Al-Farabi Kazakh National University, Laboratory of Engineering, al-Farabi 71, 050040 Almaty, Kazakhstan

DOI:

https://doi.org/10.26577/2409-6121-2015-2-1-4-8

Keywords:

Key words, porous silicon, electrochemical etching, photoluminescence, nanocrystals. PACS numbers, 82.45.Vp, 78.55.Mb, 71.24. q.

Abstract

The structure and physical properties of porous silicon obtained by electrochemical etching of monocrystalline silicon with n-type conductivity in a mixture of hydrofluoric acid and ethyl alcohol were investigated. Experimental layers were formed by varying the etching parameters. Samples were studied using the methods of atomic force microscopy (AFM),scanning electron microscopy (SEM), Raman spectroscopy (RS) and photoluminescence spectrometry (PL). It was found that the PL intensity increased with increasing etching time. It was demonstrated that by varying of technological parameters and conditions of the etching process we can control the size of nanocrystals and manufacture nanostructuresof porous silicon film with improved properties.

References

[1] M.V. Wolkin, J. Jorne, M. Fauchet, G. Allan, C Delerue. Electronic States and Luminescence in Porous Silicon Quantum Dots // Phys. Rev. Letters. – 1999. – Vol. 82. – P. 197-200.
[2] R.S. Dubey, D.K. Gautam. Synthesis and Characterization of Nanocrystalline Porous Silicon Layer for Solar Cells Applications // Journal of Optoelectronics and Biomedical Materials. – 2009. – Vol.1. – P. 8-14.
[3] E.A. Tutov, A.Yu. Andryukov, S.V. Ryabtsev. Non-equilibrium processes in capacitive sensors based on porous silicon // Pis’ma v ZhTF. – 2000. –Vol. 26. – P. 53-58 (in Russian).
[4] M. Das, D. Sarkar. Structural and Optical Properties of n-type Porous Silicon Fabricated in Dark // Indian Journal of Pure & Applied Physics. – 2013. – Vol. 51. – P.724-727.
[5] N. Di Nardo. John. Nanoscale characterization of surfaces and interfaces. – New York: John Wiley & Sons, 1994. – P. 173.
[6] S.M. Manakov, T.I. Taurbayev. Morphology and Structural Properties of a-Si:H and a-SiC:H Films Controlled in Nanoscale // J. Nanoelectron. Optoelectron. – 2012. – Vol.7. – P. 619-622.
[7] A. Halimaoui. Properties of Porous Silicon / edited by L.T. Canham. – London: IEE INSPEC, The Institution of Electrical Engineers, 1997. – P. 12.
[8] C. Delerue, G. Allan, M. Lannoo. Theoretical Aspects of the Luminescence of Porous Silicon // Phys. Rev. B. – 1993.– Vol. 15. – P. 11024-11036.
[9] B. Bulakh, N. Korsunska, L. Khomenkova, T. Stara, Ye. Venger, T. Krystab, A Kryvko. Structural and Luminescent Characteristics of Macroporous Silicon // J. Mater. Sci. Mater. Electron. – 2009. – Vol. 20. – P. 226-229.
[10] Z.C. Feng, A.T.S. Wee. Multi-technique study of porous silicon membranes by Raman scattering, FTIR, XPS, ARS and SIMS/ Porous Silicon: eds. Z.C. Feng, R. Tsu. Singapore: World Scientific, 1994. – P. 175-192.

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Published

2016-10-03

Issue

Section

Nuclear Physics and Related Techology