The formation of SiC films by magnetron sputtering

  • K. Kh. Nussupov
  • N. B. Beisenkhanov
  • B. Zh. Seitov
  • D. I. Bakranova
  • S. Keyinbay

Abstract

This paper is devoted to the synthesis of solid silicon carbide (SiCx) films on the surface of single-crystalsilicon (c-Si) with a thin interlayer of amorphous silicon (a-Si) by magnetron sputtering as well as toestablish new regularities in the influence of heat treatment on composition, crystallization processes andstructure of layers. A principal difference between the method of synthesis and the traditionally usedmagnetron sputtering is the 13.56 MHz high-frequency magnetron sputtering of a silicon target and agraphite target. An amorphous SiC0.97 film with a density of 3.179 g/cm3 and 165 nm thick was obtainedunder the deposition regime: rf = 150 W, 13.56 MHz; Ar – 2.4 l/h, 0.4 Pa; 100°C, 2400 s; containing SiCnanocrystals after annealing (1100°C, 30 min, Ar). Synthesis of an amorphous SiCx film with a density of3.204 g/cm3 at a long sputtering of Si and C targets – 14400 s, containing nanoclusters with apredominance of truncated SiC bonds, was carried out.
Published
2019-01-05
How to Cite
NUSSUPOV, K. Kh. et al. The formation of SiC films by magnetron sputtering. Physical Sciences and Technology, [S.l.], v. 5, n. 2, p. 23-28, jan. 2019. ISSN 2409-6121. Available at: <https://phst.kaznu.kz/index.php/journal/article/view/154>. Date accessed: 26 june 2019. doi: https://doi.org/10.26577/phst-2018-2-154.
Section
Nanomaterials and Nanotechnology