The formation of SiC films by magnetron sputtering

Authors

  • K. Kh. Nussupov
  • N. B. Beisenkhanov
  • B. Zh. Seitov
  • D. I. Bakranova
  • S. Keyinbay

DOI:

https://doi.org/10.26577/phst-2018-2-154
        50 123

Abstract

This paper is devoted to the synthesis of solid silicon carbide (SiCx) films on the surface of single-crystal
silicon (c-Si) with a thin interlayer of amorphous silicon (a-Si) by magnetron sputtering as well as to
establish new regularities in the influence of heat treatment on composition, crystallization processes and
structure of layers. A principal difference between the method of synthesis and the traditionally used
magnetron sputtering is the 13.56 MHz high-frequency magnetron sputtering of a silicon target and a
graphite target. An amorphous SiC0.97 film with a density of 3.179 g/cm3 and 165 nm thick was obtained
under the deposition regime: rf = 150 W, 13.56 MHz; Ar – 2.4 l/h, 0.4 Pa; 100°C, 2400 s; containing SiC
nanocrystals after annealing (1100°C, 30 min, Ar). Synthesis of an amorphous SiCx film with a density of
3.204 g/cm3 at a long sputtering of Si and C targets – 14400 s, containing nanoclusters with a
predominance of truncated SiC bonds, was carried out.

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Published

2019-01-05

How to Cite

Nussupov, K. K., Beisenkhanov, N. B., Seitov, B. Z., Bakranova, D. I., & Keyinbay, S. (2019). The formation of SiC films by magnetron sputtering. Physical Sciences and Technology, 5(3-4), 23–28. https://doi.org/10.26577/phst-2018-2-154

Issue

Section

Nanomaterials and Nanotechnology