The formation of SiC films by magnetron sputtering

  • K. Kh. Nussupov
  • N. B. Beisenkhanov
  • B. Zh. Seitov
  • D. I. Bakranova
  • S. Keyinbay


This paper is devoted to the synthesis of solid silicon carbide (SiCx) films on the surface of single-crystalsilicon (c-Si) with a thin interlayer of amorphous silicon (a-Si) by magnetron sputtering as well as toestablish new regularities in the influence of heat treatment on composition, crystallization processes andstructure of layers. A principal difference between the method of synthesis and the traditionally usedmagnetron sputtering is the 13.56 MHz high-frequency magnetron sputtering of a silicon target and agraphite target. An amorphous SiC0.97 film with a density of 3.179 g/cm3 and 165 nm thick was obtainedunder the deposition regime: rf = 150 W, 13.56 MHz; Ar – 2.4 l/h, 0.4 Pa; 100°C, 2400 s; containing SiCnanocrystals after annealing (1100°C, 30 min, Ar). Synthesis of an amorphous SiCx film with a density of3.204 g/cm3 at a long sputtering of Si and C targets – 14400 s, containing nanoclusters with apredominance of truncated SiC bonds, was carried out.
How to Cite
NUSSUPOV, K. Kh. et al. The formation of SiC films by magnetron sputtering. Physical Sciences and Technology, [S.l.], v. 5, n. 2, p. 23-28, jan. 2019. ISSN 2409-6121. Available at: <>. Date accessed: 26 june 2019. doi:
Nanomaterials and Nanotechnology