Formation peculiarities of free-standing III-v single crystalline films prepared by solution method
DOI:
https://doi.org/10.26577/phst-2014-1-16Keywords:
Free-standing film, Gallium Arsenide, Solution Growth, Phase Equilibrium, III-V Compounds.Abstract
In this paper, liquid phase epitaxy method used for the synthesis of free-standing single crystalline films of IIIV compounds by interaction of the quaternary Sn-Al-Ga-As liquid with binary solid GaAs substrate. It is shown that the possibility of the formation of free-standing single-crystalline films in such systems is determined by thermodynamic and kinetic conditions near liquid-solid interface at the growth temperature. On the basis of thermodynamic analysis and experimental study of similar multi-component systems were identified key crystallization criteria of these films. These criteria were used to predict the synthesis of free-standing binary semiconductor films on a distance from the initial semiconductor substrate in some systems.References
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technology // J. Cryst. Growth. – 1978. – Vol.45. –
P.277
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technique for producing epitaxial films on reusable
substrate // Applied Physics Letters. – 1980. - Vol.
37, N 6. - P. 560-562
Voncken M.A.J., Schermer J.J., Maduro G., Bauhuis
G.J., Mulder P., Larsen P.K. Influence of radius
of curvature on the lateral etch rate of the
weight
induced epitaxial lift-off process // Mater. Sci. Eng.
В. – 2002. – Vol.95. – P.242-248
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poluprovodnikovih plenok pri jidkostnoy epitaxii//
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V.S.Antoschenko, T.I.Taurbaev, Otdeliaemiy post
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(1997) P.83
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How to Cite
Antoschenko, V., Migunova, A., Francev, V., Lavrischev, O., & Antochshenko, Y. (2015). Formation peculiarities of free-standing III-v single crystalline films prepared by solution method. Physical Sciences and Technology, 1(1). https://doi.org/10.26577/phst-2014-1-16
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Condensed Matter Physics and Related Techology
