Formation peculiarities of free-standing III-v single crystalline films prepared by solution method

  • V. Antoschenko al-Farabi Kazakh National University
  • A. Migunova al-Farabi Kazakh National University
  • V. Francev al-Farabi Kazakh National University
  • O. Lavrischev al-Farabi Kazakh National University
  • Y. Antochshenko al-Farabi Kazakh National University

Abstract

In this paper, liquid phase epitaxy method used for the synthesis of free-standing single crystalline films of IIIV
compounds by interaction of the quaternary Sn-Al-Ga-As liquid with binary solid GaAs substrate. It is
shown that the possibility of the formation of free-standing single-crystalline films in such systems is determined
by thermodynamic and kinetic conditions near liquid-solid interface at the growth temperature. On the
basis of thermodynamic analysis and experimental study of similar multi-component systems were identified
key crystallization criteria of these films. These criteria were used to predict the synthesis of free-standing binary
semiconductor films on a distance from the initial semiconductor substrate in some systems.

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How to Cite
ANTOSCHENKO, V. et al. Formation peculiarities of free-standing III-v single crystalline films prepared by solution method. Physical Sciences and Technology, [S.l.], v. 1, n. 1, apr. 2015. ISSN 2409-6121. Available at: <https://phst.kaznu.kz/index.php/journal/article/view/16>. Date accessed: 27 may 2022. doi: https://doi.org/10.26577/phst-2014-1-16.
Section
Condensed Matter Physics and Related Techology

Keywords

Free-standing film, Gallium Arsenide, Solution Growth, Phase Equilibrium, III-V Compounds.