Formation peculiarities of free-standing III-v single crystalline films prepared by solution method

Abstract

In this paper, liquid phase epitaxy method used for the synthesis of free-standing single crystalline films of IIIV compounds by interaction of the quaternary Sn-Al-Ga-As liquid with binary solid GaAs substrate. It is shown that the possibility of the formation of free-standing single-crystalline films in such systems is determined by thermodynamic and kinetic conditions near liquid-solid interface at the growth temperature. On the basis of thermodynamic analysis and experimental study of similar multi-component systems were identified key crystallization criteria of these films. These criteria were used to predict the synthesis of free-standing binary semiconductor films on a distance from the initial semiconductor substrate in some systems.