Nonlinear electrical properties of nanostructured porous silicon films

Authors

  • Z. Zhanabaev al-Farabi Kazakh National University
  • M. Ibraimov al-Farabi Kazakh National University
  • Y. Sagidolda al-Farabi Kazakh National University

DOI:

https://doi.org/10.26577/phst-2014-1-17

Keywords:

porous silicon, nanofilms, negative resistance, tunneling effect, non-linear fractal.

Abstract

Porous silicon films have been prepared by electrochemical etching. Morphology of the films has beenstudied by scanning probe microscope characterized by presence of self-similar structures with different scales from hundreds of nanometers to microns. Current-Voltage characteristic of nanofilms has several minima in contrast to the well-known effect of negative resistance in tunnel diodes. For theoretical description of the experimental results we suggest a new concept of "non-linear fractal".

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Published

2015-04-29

Issue

Vol. 1 No. 1 (2014): PHYSICAL SCIENCES AND TECHNOLOGY

Section

Theoretical Physics and Astrophysics

License

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How to Cite

Nonlinear electrical properties of nanostructured porous silicon films. (2015). Physical Sciences and Technology, 1(1). https://doi.org/10.26577/phst-2014-1-17