Nonlinear electrical properties of nanostructured porous silicon films

  • Z. Zhanabaev al-Farabi Kazakh National University
  • M. Ibraimov al-Farabi Kazakh National University
  • Y. Sagidolda al-Farabi Kazakh National University

Abstract

Porous silicon films have been prepared by electrochemical etching. Morphology of the films has beenstudied
by scanning probe microscope characterized by presence of self-similar structures with different scales from
hundreds of nanometers to microns. Current-Voltage characteristic of nanofilms has several minima in contrast
to the well-known effect of negative resistance in tunnel diodes. For theoretical description of the experimental
results we suggest a new concept of "non-linear fractal".

References

[1] Föll H., Christophersen M., Carstensen J. &Hasse G.
Formation and application of porous silicon// Materials
Science and Engineering. R.– 2002.- Vol. 280.- pp. 1-49.
[2] Cullis A.G., Canham L.T. &Calcott P.D.J. The structural
and luminescence properties of porous silicon// J
App Phys.-1997. - Vol 82.- No 3.- pp 909-965.
[3] Canham, L, Editor, Properties of porous silicon, INSPEC
- The Institution of Electrical Engineers, 1997,
United Kingdom.
[4] Parkhutik V. Porous silicon – mechanism of growth
and applications.Solid-state Electron.1999, Vol.43, pp.
1121-1141.
[5] Vasquez, RP.,Fathauer, RW., George, T., Ksendzov,
A. & Lin, TL. Electronic structure of light emitting porous
Si, ApplPhyLett, 1992, Vol. 60, No. 8, pp. 1004-
1006.
[6] Beale, M. I. J., Benjamin, J. D., Uren, M. J., Chew,
N. G. &Cullis, A. G. The formation of porous silicon by
chemical stain etches, J. Crys. Growth, 1986, Vol. 75, pp.
408.
[7] Zubko, V.G., Smith, T.L. & Witt, A.N. Silicon Nanoparticles
and Interstellar Extinction, The Astrophysical
Journal Letters, 1999, Vol. 511, pp. L57.
[8] G. Algun, M.C. Arikan, An Investigation of Electrical
Properties of Porous Silicon, Tr. J. of Physics, 1999, Vol.
23, 789 - 797.
[9] A. Uhlir, Jr., Electrolytic Shaping of Germanium and
Silicon, The Bell System TechnicalJournal, March,
1956,Vol. 35(2), 333-347.
[10] Britnell L. et al. Resonant tunnelling and negative
differential conductance in graphene transistors// Nat.
Commun. – 2013.4:1794 doi: 10.1038/ncomms2817. –
pp. 1-5.
[11] F. A. Ben Hander, J. D. Moreno, M. L. Marcos and
J. González Velasco, Electrochemical Behaviour of Porous
Silicon Layers Prepared byStain Etching Processes,
73
Zhanabaev Z.Zh. et al. Phys. Sci. Technol., Vol. 1 (No. 1), 2014: 69-73
Journal of New Materials for Electrochemical Systems,
2003, Vol.6, 129-135.
[12] Husnen R. Abd, Y. Al-Douri, Naser M. Ahmed, U.
Hashim, Alternative-Current Electrochemical Etching of
Uniform Porous Silicon for Photodetector Applications,
International Journal ofElectrochemicalScience, 2013,
Vol.8, 11461 – 11473.
[13] MaoXiang Wang, JianHua Yu1, ChengXiu Sun.
Light emission characteristics and negative resistance
phenomenon of Si-based metal/insulator/semiconductor
tunnel junction// Applied Surface Science.– 2000.- Vol.
161.- Issues 1–2. 1.– pp. 9–13.
[14] SivakovV., Voigt F., Hoffmann B., et al. Wet -
Chemically Etched Silicon Nanowire Architectures:
Formation and Properties// Nanowires-Fundamental Research.
InTech.– 2011.- pp.45-80.
[15] ZhanabaevZ.Zh., GrevtsevaT.Yu. Physical Fractal
Phenomena in Nanostructured Semiconductors// Reviews
in Theoretical Science. – 2014. – Vol. 2.-No 3. – pp.211-
259.
[16] ZhanabaevZ. Zh., KozhagulovE.T. A generic model
for scale-invariant neural networks// Journal of Neuroscience
and Neuroengineering.– 2013.- Vol.2. – No.3 – P.
267-271.
How to Cite
ZHANABAEV, Z.; IBRAIMOV, M.; SAGIDOLDA, Y.. Nonlinear electrical properties of nanostructured porous silicon films. Physical Sciences and Technology, [S.l.], v. 1, n. 1, apr. 2015. ISSN 2409-6121. Available at: <https://phst.kaznu.kz/index.php/journal/article/view/17>. Date accessed: 27 may 2022. doi: https://doi.org/10.26577/phst-2014-1-17.
Section
Theoretical Physics and Astrophysics

Keywords

porous silicon, nanofilms, negative resistance, tunneling effect, non-linear fractal.