Nonlinear electrical properties of nanostructured porous silicon films

  • Z. Zhanabaev al-Farabi Kazakh National University
  • M. Ibraimov al-Farabi Kazakh National University
  • Y. Sagidolda al-Farabi Kazakh National University


Porous silicon films have been prepared by electrochemical etching. Morphology of the films has beenstudied
by scanning probe microscope characterized by presence of self-similar structures with different scales from
hundreds of nanometers to microns. Current-Voltage characteristic of nanofilms has several minima in contrast
to the well-known effect of negative resistance in tunnel diodes. For theoretical description of the experimental
results we suggest a new concept of "non-linear fractal".


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How to Cite
ZHANABAEV, Z.; IBRAIMOV, M.; SAGIDOLDA, Y.. Nonlinear electrical properties of nanostructured porous silicon films. Physical Sciences and Technology, [S.l.], v. 1, n. 1, apr. 2015. ISSN 2409-6121. Available at: <>. Date accessed: 27 may 2022. doi:
Theoretical Physics and Astrophysics


porous silicon, nanofilms, negative resistance, tunneling effect, non-linear fractal.