Current and capacitance hysteresis in porous semiconductor nanofilms

Authors

  • Z. Zh. Zhanabaev Department of Solid State Physics and Nonlinear Physics, Al-Farabi Kazakh National University, http://orcid.org/0000-0001-5959-2707
  • D. A. Turlykozhayeva Department of Solid State Physics and Nonlinear Physics, Al-Farabi Kazakh National University, http://orcid.org/0000-0002-7326-9196
  • S. B. Ikramova Department of Solid State Physics and Nonlinear Physics, Al-Farabi Kazakh National University, http://orcid.org/0000-0002-4608-7717
  • A. O. Tileu Department of Solid State Physics and Nonlinear Physics, Al-Farabi Kazakh National University,
  • A. A. Maksutova Department of Solid State Physics and Nonlinear Physics, Al-Farabi Kazakh National University, 71 al-Farabi Avenue, 050040, Almaty, Kazakhstan
  • B. A. Khaniyev Department of Solid State Physics and Nonlinear Physics, Al-Farabi Kazakh National University, 71 al-Farabi Avenue, 050040, Almaty, Kazakhstan http://orcid.org/0000-0002-0103-9201
  • A. K. Khaniyeva Department of Solid State Physics and Nonlinear Physics, Al-Farabi Kazakh National University, 71 al-Farabi Avenue, 050040, Almaty, Kazakhstan http://orcid.org/0000-0002-0167-3093

DOI:

https://doi.org/10.26577/phst.2020.v7.i2.06

Abstract

At present, the study of complex electrophysical characteristics of semiconductor nanofilaments and
nanofilms is of interest: the presence of non-monotonic oscillating characteristics with memory, areas of
negative differential resistance. The aim of this work is to experimentally study both the volt-ampere and
volt-farad characteristics of semiconductor nanoporous structures. The studied samples of porous silicon
with the p-n structure were obtained by electrochemical etching. Single-crystal silicon with a p – n+
junction was used as the initial substrate. The NI EL VIS II+ educational platform and the Agilent E4980A
instrument were used to study the electrophysical characteristics. To measure the dependence of current on
voltage, as well as capacitance on voltage, Inga contacts with a thickness of 370 nm each were applied to
nanoporous films. Thus, in this work, the phenomena of current switching, hysteresis behavior of current,
and capacitance of porous silicon nanofilms are experimentally studied. It was found that these effects are
amplified by a factor of 3-4 when the films are irradiated with an infrared laser. The results of this work
can be used in the field of nanotechnology to improve memory and sensory elements. The established
experimental facts can serve as a basis for constructing physical theories.

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Published

2020-12-30

Issue

Vol. 7 No. 3-4 (2020): PHYSICAL SCIENCES AND TECHNOLOGY

Section

Electronics and Related Techology

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