Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms

Abstract

Currently, there is a growing need for high-performance photocells with increased stability of parameters to external influences, such as thermal and radiation resistance. This work is devoted to the study of photocells available in the volume of an ordered micro- and nanostructure based on silicon doped with impurity nickel atoms. The study of the formation of micro- and nanoclusters of impurity atoms in silicon photocells that were subjected to additional high-temperature processing makes it possible to determine the degradation of nickel clusters, which strongly affect the electrical parameters of photocells. It is shown that impurity nickel atoms will increase the stability of the electrophysical parameters of photocells under the influence of both high temperature and radiation. The results obtained in the study showed that the introduction of nickel impurity atoms into the volume of silicon-based photocells leads to temperature and radiation resistance, and also increases efficiency.