Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them

Abstract

At present, the technology of obtaining diamond films on silicon and other substrates is well studied. However, in all published works to date, there has been no report of a layer of silicon carbide formed between the diamond film and the silicon substrate. The presence of a layer (15R-SiС)_1-x(C_diamond)_x in the structure was revealed in the studies of structures with a diamond film obtained by us on silicon substrates by chemical vapor deposition. Diamond films were obtained on single-crystal silicon substrates with (111) orientation and n-type conductivity by the well-known CVD technology in a hydrogen-methanol (CH₃OH) mixture with the addition of a certain amount (know-how) of ammonia (NH₃). The diamond films consisted of small single crystals 3–5 µm in size, closely interlocked and constituting a continuous film. When studying the current-voltage characteristics of structures created on the basis of the obtained diamond films, a blue-white glow with a blue-violet tint was observed, which is explained by the mixing of blue-violet photons with photons re-emitted in the diamond film.