Engineering high aspect-ratio silicon nanostructures

Ali Belarouci; Roman Tkach; Dmytro Averin

doi:10.26577/phst.2023.v10.i2.011

Engineering high aspect-ratio silicon nanostructures

Authors

Ali Belarouci Univ Lyon, Ecole Centrale de Lyon, INSA de Lyon, Université Claude Bernard Lyon https://orcid.org/0000-0002-9818-5976
Roman Tkach National Technical University of Ukraine https://orcid.org/0000-0001-5866-3796
Dmytro Averin 1Univ Lyon, Ecole Centrale de Lyon, INSA de Lyon, Université Claude Bernard Lyon https://orcid.org/0000-0002-4432-3958

DOI:

https://doi.org/10.26577/phst.2023.v10.i2.011

82 113

Abstract

Large-area high density vertical silicon nanowire arrays are fabricated by metal-assisted chemical etching. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon substrate, which enables to precisely control the final diameter of the nanowires. The formation of ordered silicon nanowire arrays is due to selective and highly anisotropic etching of silicon induced by the gold patterned mask.

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How to Cite

Belarouci, A., Tkach, R., & Averin, D. (2023). Engineering high aspect-ratio silicon nanostructures. Physical Sciences and Technology, 10(3-4), 87–94. https://doi.org/10.26577/phst.2023.v10.i2.011

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Issue

Vol. 10 No. 3-4 (2023): PHYSICAL SCIENCES AND TECHNOLOGY

Section

Nanomaterials and Nanotechnology

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