Engineering high aspect-ratio silicon nanostructures

Abstract

Large-area high density vertical silicon nanowire arrays are fabricated by metal-assisted chemical etching. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon substrate, which enables to precisely control the final diameter of the nanowires. The formation of ordered silicon nanowire arrays is due to selective and highly anisotropic etching of silicon induced by the gold patterned mask.