Engineering high aspect-ratio silicon nanostructures

Ali Belarouci; Roman Tkach; Dmytro Averin

doi:10.26577/phst.2023.v10.i2.011

Engineering high aspect-ratio silicon nanostructures

Authors

Ali Belarouci Univ Lyon, Ecole Centrale de Lyon, INSA de Lyon, Université Claude Bernard Lyon https://orcid.org/0000-0002-9818-5976
Roman Tkach National Technical University of Ukraine https://orcid.org/0000-0001-5866-3796
Dmytro Averin 1Univ Lyon, Ecole Centrale de Lyon, INSA de Lyon, Université Claude Bernard Lyon https://orcid.org/0000-0002-4432-3958

DOI:

https://doi.org/10.26577/phst.2023.v10.i2.011

86 118

Abstract

Large-area high density vertical silicon nanowire arrays are fabricated by metal-assisted chemical etching. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon substrate, which enables to precisely control the final diameter of the nanowires. The formation of ordered silicon nanowire arrays is due to selective and highly anisotropic etching of silicon induced by the gold patterned mask.

Downloads

How to Cite

Belarouci, A., Tkach, R., & Averin, D. (2023). Engineering high aspect-ratio silicon nanostructures. Physical Sciences and Technology, 10(3-4), 87–94. https://doi.org/10.26577/phst.2023.v10.i2.011

Download Citation

Issue

Vol. 10 No. 3-4 (2023): PHYSICAL SCIENCES AND TECHNOLOGY

Section

Nanomaterials and Nanotechnology

License

Contributor hereby grants to the "Physical Sciences and Technology" the full and exclusive rights to reproduce, publish, republish, prepare all foreign language translations and other derivative works of an article in any kind of electronic media and print editions.