The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

Abstract

The properties of KDB-5 grade silicon were studied (including determining the concentration of electroactive manganese atoms) doped with manganese by the diffusion method in the temperature range T=1100÷1300 ˚C. It is shown that with an increase in the diffusion temperature in the region T=1100÷1300 ˚C, the concentration of electroactive manganese atoms decreases and at T=1300 ˚C their number becomes significantly less than the concentration of the initial boron impurity. We assume that this behavior of manganese atoms may be associated with the formation of electrically neutral quasi-molecular complexes between oxygen and manganese atoms located in neighboring site states.

During the formation of electrically neutral complexes, tetrahedral cells of the Si₂O⁺⁺Mn^-- type are formed in the silicon lattice, slightly disturbing its periodicity, but significantly different in properties from the elementary cell of silicon. The nature of the chemical bond in them is ionic-covalent; in addition, the binding energy of the electron in it is different. With an increase in the concentration of such tetrahedral cells, various combinations of them can be formed, up to the formation of nanocrystals of a new phase, which will have their own fundamental parameters.