Investigation of the physical properties of nanoscale porous silicon films

Authors

  • S.M. Manakov Al-Farabi Kazakh National University, NNLOT, al-Farabi 71, 050040 Almaty, Kazakhstan
  • Ye. Sagidolda Al-Farabi Kazakh National University, Laboratory of Engineering, al-Farabi 71, 050040 Almaty, Kazakhstan

DOI:

https://doi.org/10.26577/2409-6121-2015-2-1-4-8

Keywords:

Key words, porous silicon, electrochemical etching, photoluminescence, nanocrystals. PACS numbers, 82.45.Vp, 78.55.Mb, 71.24. q.

Abstract

The structure and physical properties of porous silicon obtained by electrochemical etching of monocrystalline silicon with n-type conductivity in a mixture of hydrofluoric acid and ethyl alcohol were investigated. Experimental layers were formed by varying the etching parameters. Samples were studied using the methods of atomic force microscopy (AFM),scanning electron microscopy (SEM), Raman spectroscopy (RS) and photoluminescence spectrometry (PL). It was found that the PL intensity increased with increasing etching time. It was demonstrated that by varying of technological parameters and conditions of the etching process we can control the size of nanocrystals and manufacture nanostructuresof porous silicon film with improved properties.

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Published

2016-10-03

Issue

Vol. 2 No. 1 (2015): PHYSICAL SCIENCES AND TECHNOLOGY

Section

Nuclear Physics and Related Techology

License

Contributor hereby grants to the "Physical Sciences and Technology" the full and exclusive rights to reproduce, publish, republish, prepare all foreign language translations and other derivative works of an article in any kind of electronic media and print editions.

How to Cite

Investigation of the physical properties of nanoscale porous silicon films. (2016). Physical Sciences and Technology, 2(1). https://doi.org/10.26577/2409-6121-2015-2-1-4-8