Aluminum doped zinc oxide layers by atomic layer deposition and magnetron sputtering: formation and comparison of optoelectronic properties

Authors

  • G.K. Mussabek Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • К.К. Dikhanbayev Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • V. Sivakov Leibniz Institute of Photonic Technologies, Jena, Germany
  • F. Talkenberg Leibniz Institute of Photonic Technologies, Jena, Germany
  • S. Sailaubek Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • А.S. Djunusbekov Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • G.Ye. Ukenova Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • А.Ye. Kemelbekova Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan

DOI:

https://doi.org/10.26577/2409-6121-2015-2-1-18-23

Keywords:

Key words, zinc oxide, thin films, morphology, optical properties, electrical properties. PACS numbers, 81.15.Gh, 73.61.-r.

Abstract

Thin films of aluminum-doped zinc oxide (AZO) were prepared using magnetron sputtering and atomic layer deposition (ALD) techniques. Atomic force microscopy (AFM) studies of AZO films surface morphology show that the surface of produced by ALDfilms is a smoother in comparison with films formed by magnetron sputtering.According to comparative analysis of optical transmittance spectra in the visible range of 300 - 800 nm, films formed by ALD technique demonstrates 10% higher transparency than those that obtained by magnetron sputtering. Investigation of samples electrical properties show that the conductivity of AZO films obtained by ALD technique actually two orders of magnitude higher than analogues obtained by magnetron sputtering.

Downloads

Published

2016-10-03

Issue

Vol. 2 No. 1 (2015): PHYSICAL SCIENCES AND TECHNOLOGY

Section

Condensed Matter Physics and Related Techology

License

Contributor hereby grants to the "Physical Sciences and Technology" the full and exclusive rights to reproduce, publish, republish, prepare all foreign language translations and other derivative works of an article in any kind of electronic media and print editions.

How to Cite

Aluminum doped zinc oxide layers by atomic layer deposition and magnetron sputtering: formation and comparison of optoelectronic properties. (2016). Physical Sciences and Technology, 2(1). https://doi.org/10.26577/2409-6121-2015-2-1-18-23