Structure and electronic properties of amorphous As40Se30S30 films prepared by ion-plasma sputtering method

Authors

  • O. Prikhodko Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • M. Maltekbasov Zhansygurov Zhetysu State University, 058000, Zhansygurov 187a, Taldykorgan, Kazakhstan
  • N. Almasov Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • S. Maximova Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • V. Ushanov Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • S. Dyusembayev Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • S. Kozyukhin Kurnakov Institute of General and Inorganic Chemistry, RAS, 119991, Moscow, Russia

DOI:

https://doi.org/10.26577/2409-6121-2015-2-1-24-29

Keywords:

Key words, ion-plasma sputtering, RF-films, photoconductivity. PACS numbers, 68.55.-a, 73.61.-r

Abstract

The atomic and local structure, as well as the electrical, optical, photoelectrical properties and drift mobility of charge carriers in amorphous As40Se30S30 films, prepared by the method of RF ion-plasma sputtering (RF-films), were studied in comparison with those of the films, prepared by the method of thermal vacuum evaporation (TE-films). These two methods differ significantly in the conditions of substance vaporization and condensation of atoms on a substrate. It was found that the films fabricated by the different methods have differences in structure and electronic parameters. The essential differences in photoconductivity and transport phenomena are observed, too. It was concluded that RF As40Se30S30 films have a modified structure. This leads to changes in the spectrum of extended and localized electronic states in these films, which, in its turn, causes differences in their electronic properties.

Downloads

Published

2016-10-03

Issue

Vol. 2 No. 1 (2015): PHYSICAL SCIENCES AND TECHNOLOGY

Section

Plasma Physics and Related Technology

License

Contributor hereby grants to the "Physical Sciences and Technology" the full and exclusive rights to reproduce, publish, republish, prepare all foreign language translations and other derivative works of an article in any kind of electronic media and print editions.

How to Cite

Structure and electronic properties of amorphous As40Se30S30 films prepared by ion-plasma sputtering method. (2016). Physical Sciences and Technology, 2(1). https://doi.org/10.26577/2409-6121-2015-2-1-24-29