Electron backscatter diffraction in the silicon nanowires

Authors

  • K.K. Dikhanbayev Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • V.A. Sivakov Leibniz Institute of Photonic Technology, Technology e.V. PF 100239, 07702 Jena, Germany
  • F. Talkenberg Leibniz Institute of Photonic Technology, Technology e.V. PF 100239, 07702 Jena, Germany
  • G.K. Mussabek Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • Ye.T. Taurbayev Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • N.N. Tanatov Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan
  • E. Shabdan Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, Kazakhstan

DOI:

https://doi.org/10.26577/2409-6121-2015-2-2-4-11

Keywords:

Key words, silicon, silicon nanowires, morphology, metal-induced chemical etching, electron backscatter diffraction. PACS numbers, 81.07.-b, 61.46.Np

Abstract

In this paper we consider the formation on the surface of silicon by metal-induced chemical etching, the silicon nanowires and the study of their electron (SEM) and (TEM) microscopy, X-ray diffraction (EDX) analysis and electron backscatter diffraction (EBDS) in nanowires. Combination of field emission SEM and EBSD possible to determine the orientation of the individual grains, the local texture oriented correlation on solid surfaces of polycrystalline material. This method of producing silicon nanowires has a number of the above-mentioned advantages over other methods. In addition, the studied objects themselves exhibit interesting optical properties, such as the localization of light, photoluminescence (PL), very low reflectance (<10% at 300-800 nm) [1] and high absorption [2] (> 90% at 500 nm).

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Published

2016-10-03

Issue

Vol. 2 No. 2 (2015): PHYSICAL SCIENCES AND TECHNOLOGY

Section

Nuclear Physics and Related Techology

License

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How to Cite

Electron backscatter diffraction in the silicon nanowires. (2016). Physical Sciences and Technology, 2(2). https://doi.org/10.26577/2409-6121-2015-2-2-4-11