Electron backscatter diffraction in the silicon nanowires
DOI:
https://doi.org/10.26577/2409-6121-2015-2-2-4-11Keywords:
Key words, silicon, silicon nanowires, morphology, metal-induced chemical etching, electron backscatter diffraction. PACS numbers, 81.07.-b, 61.46.NpAbstract
In this paper we consider the formation on the surface of silicon by metal-induced chemical etching, the silicon nanowires and the study of their electron (SEM) and (TEM) microscopy, X-ray diffraction (EDX) analysis and electron backscatter diffraction (EBDS) in nanowires. Combination of field emission SEM and EBSD possible to determine the orientation of the individual grains, the local texture oriented correlation on solid surfaces of polycrystalline material. This method of producing silicon nanowires has a number of the above-mentioned advantages over other methods. In addition, the studied objects themselves exhibit interesting optical properties, such as the localization of light, photoluminescence (PL), very low reflectance (<10% at 300-800 nm) [1] and high absorption [2] (> 90% at 500 nm).References
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[2] V. Sivakov, G. Andrа, A. Gawlik, A. Berger, J. Plentz, F. Falk, S.H Christiansen. Silicon Nanowire- Based Solar Cells on Glass: Synthesis, Optical Properties, and Cell Parameters // Nano Letters. – 2009. – Vol. 9. – P. 1549-1554.
[3] Hui Fang, Xudong Li, Shuang Song, Ying Xu, Jing Zhu. Fabrication of slantingly-aligned silicon nanowire arrays for solar cell applications // J. Nanotechnology. –2008. – Vol. 19. – P. 255703.1- 255703.6.
[4] D.A.G. Bruggeman. Berechnung verschiedener physicakalisherkonstantenvon heterogen substanzen // Ann. Phys. (Leipzig). – 1935. – Vol. 24. – P. 634–664.
[5] S. Chan. Porous silicon multilayer structures: from interference filters to light emitting devices to biosensors // PhD thesis. New York: University of Rochester. – 2000. – 155p.
[6] B.M. Kayes,. et al. Synthesis and Characterization of Silicon Nanorod Arrays for Solar Cell Applications // Photovoltaic Energy Conversion IEEE 4th World Conference Record. – 2006. – Vol.1. – P. 221-224.
[7] E. Galopin. Metal-assisted chemical etching of silicon: Preparation of silicon nanowire arrays // Electrochem. Soc. Meeting Abstracts. – 2008. – P. 2.
[8] G.K. Mussabek, V.Yu. Timoshenko, K.K. Dikhanbayev, A.S. Dzhunusbekov, T.I. Taurbayev, V.E. Nikulin, Ye.T Taurbayev. Antireflections сoatings for silicon solar cells formed by wet chemistry methods // KazNU Bulletin, physics series. – 2013.– №2(45). – Р. 14-19.
[9] K. Tsujino, M. Matsumura. Morphology of nanoholes formed in silicon by wet etching in solutions containing HF and H2O2 at different concentrations using silver nanoparticles as catalysts // Electrochim. Acta. – 2007. – Vol. 53. – №1. – P. 28-34.
[10] L.A. Osminkina, K.A. Gonchar, V.S. Marshov, K.V. Bunkov, D.V. Petrov, L.A. Golovan, F. Talkenberg, V.A. Sivakov, V.Yu Timoshenko. Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect. // Nanoscale Research Letters. – 2012. – Vol.7. – P. 524- 530.
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Published
2016-10-03
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Section
Nuclear Physics and Related Techology
